| 摘要 |
PURPOSE:To prevent the generation of such abnormalities as augmentation of power source current, augmentation of the leak of the transistor and so forth even when a semiconductor device is used under a condition of high withstand voltage in the semiconductor device being covered with a protective film in a two-layer structure by a method wherein an aperture for wire-bonding is provided on part of the upper protective film in adition to an aperture for wire-bonding. CONSTITUTION:In a semiconductor device containig an MOS transistor having a protective film in a dual structure, an oxide film, such as an SiO2 film, and a PSG film, such as a phosphorus- glass film, are usually used as the first protective film 18 and a nitriding film (Si3N4 film) is chiefly used as the second protective film 19, because its humidity resistance is excellent. However, in case a transistor, which is constituted as one for the abovementioned semiconductor device, is a high-withstand voltage type, such abnormalities as augmentation of power source current, augmentation of the leak of the transistor and so forth generate due to the existence of the nitriding film, which is used as the second protective film. but, when a part of the second protective film 19 to correspond to the upper part of the MOS transistor is removed excluding a bonding pad 16 and an aperture 19' is formed on the part of the protective film 19, it is eliminated that the second protective film 19 affects an adverse effect indirectly to the transistor through the first protective film 18 at the manufacturing time of this semiconductor device, at its time of practical use or at its time of life test. |
