| 摘要 |
PURPOSE:To enable the proceeding of etching to equalize as well as to enhance the workability by a method wherein the dimension of each rear hole is made smaller and the independent rear holes are respectively formed from the back surface of the substrate toward the individual front holes corresponding mutually to the independent rear holes and the front and rear holes are made to interpenetrate each other. CONSTITUTION:Plural pieces of front holes 2 are bored from the surface of a semiconductor substrate 1 consisting of gallium arsenide in such a way as not to penetrate the substrate 1, and after that, independent rear holes 4 are respectively formed from the back surface of the substrate 1 towards the individual front holes 2 corresponding mutually to the independent rear holes 4 and the rear holes 4 are respectively made to interpenetrate with the mutually corresponding to front holes 2. According to such a way, the individual rear holes 4 are all smaller in dimension compared to the individual rear holes formed in a conventional method, wherein the individual rear holes were all provided in such a way as to penetrate the substrate. As a result, the processing of etching is equalized and the dimensional precision of each hole is enhanced, and moreover, the workability is also made to upgrade. |
