| 摘要 |
PURPOSE:To obtain an amorphous silicon (a-Si) semiconductor film forming device provided with a function to check generation of leakage discharge by a method wherein the outer peripheral surface of a voltage applying electrode is surrounded with a conductor for electrostatic shield. CONSTITUTION:Substrates 41 arranged in a vacuum tank 52 are held at the prescribed temperature. Then SiH4 gas is introduced into the vacuum tank 52, and a high-frequency voltage is applied according to an electric power source 56 under the prescribed reaction pressure. Accordingly, reaction gas is decomposed according to glow discharge between an electrode 57 and the substrates 41 to be deposited as a-Si:H on the substrates 41. The electrode 57 is surrounded coaxially with a cylindrical electrostatic shield 58 having conductivity. The shield 58 is formed of a base wall 58b and a peripheral wall 58c integrated in one body, a top 58a is formed in a netlike type, and reaction gas is made as to be exhausted outside of the vacuum tank 52. By providing the shield 58 like this, glow discharge is confined between the electrode 57 and the substrates 41, and leakage discharge is not generated. |
