发明名称 METHOD OF TREATING WITH PLASMA
摘要 PURPOSE:To improve the uniformity of etching treatment in a material, by generating a magnetic field in the region of the material where the etching rate would be ununiform if no measure is taken, shortly before completion of the etching treatment. CONSTITUTION:When a predetermined amount of treatment gas is supplied into a treatment chamber 10 and a high-frequency power is applied to a material electrode 20, glow discharge is caused to occur in a discharge space 40 and a material 70 is etched thereby. If the etching treatment is carried out in this manner, the etching rate tends to be higher in the outer peripheral region in the material 70 and thus the uniformity in the etching treatment of the material 70 is decreased. In order to solve this problem, a signal is sent to a power source 61 by an emission spectrum monitor 50 shortly before completion of the etching treatment so as to cause an electromagnet 60 to generate a magnetic field. This magnetic field is generated in the region of the material 70 where the etching rate would be ununiform if no such measure is taken. Plasma is entrapped by the generation of the magnetic field and the etching rate in the central region of the material 70 is increased, whereby the uniform distribution of the etching rate can be realized in the material 70. Consequently, the uniformity of the treatment can be improved.
申请公布号 JPS61120420(A) 申请公布日期 1986.06.07
申请号 JP19840240622 申请日期 1984.11.16
申请人 HITACHI LTD 发明人 OKADA TAKEO;TAKAHASHI TSUYOSHI
分类号 C23F4/00;H01L21/302;H01L21/3065 主分类号 C23F4/00
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