| 摘要 |
PURPOSE:To improve safety and the operating efficiency of an ion implantation machine by implanting impurity ions while using a gate electrode as a mask to form source and drain regions and implanting the same impurity ions while employing the gate electrode and an insulating film shaped to the side wall of the gate electrode as masks. CONSTITUTION:A gate oxide film 2 and a field oxide film 3 are formed on a P type silicon substrate 1 through thermal oxidation. A polycrystalline silicon film is shaped on these oxide films, and a gate electrode 4 is formed through etching. An N type impurity is diffused into the silicon substrate 1 while employing the gate electrode 4 and the field oxide film 3 as masks through an ion implantation method to form source and drain regions 10. An insulating film 6 is shaped and the insulating film 7 is left on the side wall of the gate electrode 4 through etching, and the insulating film on the diffusion layer 10 is removed. Phosphorus is driven directly into the silicon substrate 1 while using the field insulating film 3, the gate electrode 4 and the insulating film 7 as masks to form comparatively deep diffusion layers 11. An intermediate insulating film 9 is laminated and shaped. |
