| 摘要 |
PURPOSE:To reduce the quantity of side etching, and to enhance reliability and yield of a semiconductor device by a method wherein after wet etching is performed to a wafer at the prescribed depth, dry etching is performed to separate the semiconductor device. CONSTITUTION:An Al film 7 is evaporated to the back of a wafer 1 formed to thickness of the degree of 80mum, for example. A photoresist 8 is applied on the Al film 7 thereof, and masks 9 for selective etching are formed corresponding to individual diodes. Chemical etching is performed selectively to the wafer 1 at etching depth of the degree of 60mum utilizing the masks 9 for selective etching from the back of the wafer 1. Then dry etching is performed to the wafer 1 utilizing the masks 9 for selective etching to etch the remaining part having thickness of the degree of 20mum. Accordingly, the individual diodes are separated from the wafer 1, while at this time, in regard to the part etched according to dry etching, the quantity of side etching is extremely small. |
