DYNAMIC RAM

摘要

PURPOSE:To speed up operation with simple constitution by matching the precharge end timing of a data line with word line selecting timing almost simultaneously. CONSTITUTION:When the word line selecting timing signal phiX is raised to its H level almost simultaneously with the decay timing t1 of the L level of a precharge pulse phiPCM, one word line W determined by complementary address signals aO-aB supplied through a multiplexer MPX synchronously with said rise is raised to the H level and turned to the selected status. Consequently, plural memory cells coupled with the selected word line are selected and the information storing MOS capacity of each memory cell is coupled with a data line D (or -D) through an address selecting MOSFET.