| 摘要 |
PURPOSE:To improve the electric characteristics of a Ge semiconductor device by a method wherein an insulating film having excellent interfacial characteristics is formed by providing the film consisting of a specific substance on a Ge substrate. CONSTITUTION:An oxide film 2 consisting of Ge-Si is formed on an N type Ge 1. Said oxide film 2 is formed by performing a CVD (chemical vapor deposition) method using SiH4, GeH4 and NO2. Then, a nitride film 2 consisting of Ge-Si is deposited in plasma using SiH4, GeH4 and NH3. An aperture part is provided on the prescribed region of the film 2, B is ion-implanted, a P type conductive layer is formed by performing a heat treatment, a source region 3 and a drain region 4 are formed, and source and drain electrodes 5 and 6 are provided. A gate electrode 7 is provided on the surface of the film 2, and a Ge MOSFET is completed. This film 2 of MOS structure displays excellent characteristics as an insulating film. |
