| 摘要 |
PURPOSE:To obtain a resist material of 2-layer structure high in sensitivity to high energy rays by introducing a photosensitive group high in reactivity due to high energy rays into phenyl groups on the side chains. CONSTITUTION:The resist material using high energy rays having high sensitivity and resolution is obtained by introducing photosensitive groups to a silyl group-contg. polymer superior in oxygen plasma resistance. Since the obtained silyl group-contg. polymer has a high glass transition point, as compared with the conventional silicon resin, and groups high in sensitivity to high energy rays and reactivity and they are combined with phenyl groups on the side chains having low chain transfer reactivity and hindering resolution. Since the polymr is obtained by living polymn. a resist material has an extremely narrow mol.wt. distribution, that is, high resolution. |
