| 摘要 |
PURPOSE:To improve the degree of resolution of negative type resist with the projection type exposing device by a method wherein a novolac resin layer is formed on a photoresist film, and after a protective film consisting of the resin having a very small oxygen transmission coefficient has been formed, an exposing and developing process is performed. CONSTITUTION:An oxide film is formed on the material to be etched 11. Then, a negative type resist is coated on the oxide film 12, and a resist film 13 is formed. Subsequently, a solution of novolac resin wherein ethyl solvent is used is coated on the resist film 13, and a novolac resin layer 14 is formed. A heat treatment is performed, and then a PVA solution dissolved in water, for example, is coated and a protective film 15 is formed. An exposing process is performed on the resist film 13 through the intermediary of the prescribed photomask 16 using a projection type exposing device. After the protective film 15 has been removed using the prescribed solvent, a developing process is performed, and the resist film 13 having the prescribed pattern is obtained. As a result, the protective film 15 and the resist film 13 interact each other and the lowering of the degree of resolution can be prevented. |
