| 摘要 |
PURPOSE:To form a lateral transistor with high performance and a longitudinal bipolar transistor on the same substrate by a method wherein, before forming an emitter of lateral transistor, diffusing process is performed to form a base region from an opening to form an emitter region. CONSTITUTION:An oxide film 5 is photoetched to form an emitter forming opening 5a on the part to be an emitter region of P-N-P transistor. The main surface of an epitaxial layer 4 adjoining to a true base region 7a is implanted with P type impurity ion for diffusion to form a P type collector region 9 utilizing a photoresist 10 as a mask. Then contact holes 12a-12c may be formed into an interlayer insulating film 11 by photoetching process so that an outer base region 7b, an emitter region 8 and the collector region 9 of lateral transistor as well as base, emitter and collector regions of N-P-N transistor may come into contact with respective wirings. |
