发明名称 METHOD FOR FORMATION OF PATTERN
摘要 PURPOSE:To enable to control the two-dimentional arrangement of a monomolecular film and a monomolecular accumulated film by a method wherein, after gamma rays have been scanned on the base surface in a reducing gas atmosphere, the monomolecular film or the monomolecular accumulated film is formed, and a pattern is formed thereon. CONSTITUTION:For example, a glass substrate 1-1 whereon ITO1-2 is deposited is used as a base. The base is placed in vacuum, hydrogen is flowed into the surface part of the base, gamma rays are scanned on the surface of the base using a mask, and the base having a modified layer 1-3 is formed. Then, a monomolecular accumulated film of arachidic acid is formed by performing an LB method using a chloroform solution of arachidic acid. A monomolecular accumulated film 1-5 is not formed on a modified part 1-3, and the film 1-5 is formed on a non-modified part 1-4 only in accordance with a pattern.
申请公布号 JPS60211923(A) 申请公布日期 1985.10.24
申请号 JP19840067580 申请日期 1984.04.06
申请人 CANON KK 发明人 HIRAI YUTAKA;MATSUDA HIROSHI;TOMITA YOSHINORI
分类号 H01L51/05;H01L21/304;H01L21/312;H01L21/368;H01L31/18;H01L49/02;H01L51/40 主分类号 H01L51/05
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