发明名称 PATTERN FORMING MEANS
摘要 PURPOSE:To control disposition of a monomolecular film or a monomolecular multilayered film in two dimensions by forming a pattern of a monomolecular film or a monomolecular multilayered film after scanning the surface of the base with ion beams under the environment of no gas existence. CONSTITUTION:With a glass substrate 1-1 as a base, an Si injected layer 1-2 of 50Angstrom depth is formed in accordance with a pattern by scanning Si ion beams on the surface. Then, using a chloroform solution of stearic acid of 5X10<-3>mol/l, a monomolecular film of the stearic acid is formed. This monomolecular film of stearic acid is formed, at first, by submerging the base to the bottom of water, then, after a film is developed, with a pulling up speed of 2cm/min and a surface pressure of 35dyne/cm. The monomolecular film 1-4 is formed in accordance with the pattern, on the area of the ion injected layer 1-3 but not formed on the other area of 1-2. Thus, by changing nature of the base using ion beams, the formation of a monomolecular film or a monomolecular multilayered film on the base in accordance with a pattern is made possible.
申请公布号 JPS60211829(A) 申请公布日期 1985.10.24
申请号 JP19840067564 申请日期 1984.04.06
申请人 CANON KK 发明人 HIRAI YUTAKA;TOMITA YOSHINORI;MATSUDA HIROSHI
分类号 H01L51/05;H01L21/304;H01L21/312;H01L21/368;H01L49/02;H01L51/40 主分类号 H01L51/05
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