| 摘要 |
In semiconductor devices of extremely small dimensions, the problem of shorting together of adjacent, differently doped regions (12, 14) by a contact layer deposited through a window (17) which, owing to the smallness of the region dimensions, unavoidably exposes a surface portion of the adjacent region (12) not intended to be contacted, is solved by the use of a transfer layer (18) deposited first in the window which, upon heating, transfers impurities from the region (14) intended to be contacted to the unintentionally exposed portion of the adjacent region (12). The transferred impurities convert the exposed portion of the adjacent region to the same conductivity type as the impurity source region (14), thereby preventing shorting together of the contacted region (14) with the remaining, unconverted portion of the adjacent region. |
