| 摘要 |
PURPOSE:To enable to form an insulating film, which has a superior interfacial characteristic and is stable, and to contrive to improve the electrical characteristic of a Ge semiconductor device by a method wherein silicon is introduced in the Ge substrate using an ion-implantation method and an oxide film and nitriding film, both of which consists of Ge and Si, are formed by performing an oxidation or nitriding treatment. CONSTITUTION:Silicon ions 2 are implanted in an N type Ge substrate 1 performed a mechanical treatment and a chemical treatment to form an Si implanted layer 3. A heat treatment and an oxidation treatment are performed in an oxygen atmosphere to form an oxide film 4 consisting of Ge and Si. The part of the oxide film 4 formed in the vicinity of the surface of the oxide film 4 is formed of an oxide film containing Si more compared to Ge and the part of the oxide film 4 formed in the interface between the oxide film 4 and the N type Ge substrate 1 is formed of an oxide film containing Ge more compared to Si. That is, an oxide film, which contains Si more than Ge and is stable to an oxidizing atmosphere and so forth, is formed in the vicinity of the surface of the oxide film 4 and an oxide film, which contains Ge more than Si and has a less interfacial level as the oxide film has been connected with the substrate 1, is formed in the interface between the oxide film 4 and the N type Ge substrate 1. |
