| 摘要 |
PURPOSE:To produce the titled solar battery with high efficiency improving the characteristics of i-P junction and N-i junction by a method wherein at least one of metal, oxide, fluoride and nitride or an amorphous silicon layer reacting to one of them is laid between P-layer and N-layer. CONSTITUTION:When SnO2 is utilized as an intermediate layer, a hydrogenated amorphous silicon (P-layer) 2 containing B is formed on an SUS substrate 1 by plasma CVD process at the substrate temperature of 230 deg.C utilizing mixed gas of B2H6 and SiH4. Next a-Si0.6Ge0.4: H (i-layer) 3 is formed utilizing mixed gas of SiH4 and GeH4 and then another hydrogenated amorphous silicon (N-layer) 4 containing P is formed utilizing mixed gas of PH3 and SiH4. Then Sb dope SnO2 layer 20 is formed on the overall surface by vacuum evaporating process within the range of substrate temperature of 100-250 deg.C. Later the other hydrogenated amorphous silicon layers i.e. P-layer 5, i-layer 6 and N-layer 7 are successively formed. Finally ITO 8 is formed on overall surface to form dual electrodes Ti 9/Ag 10 as collector electrodes. |
