| 摘要 |
PURPOSE:To cut down the production cost while improving the reliability by means of utilizing dual layer structured wiring made of Al/metal with high melting point. CONSTITUTION:An N type region 2 is selectively formed on the surface of a semiinsulating GaAs substrate 1. Then ohmic electrodes 3 are formed of Au/ Ni/AuGe on the N type GaAs. Au/Ni/AuGe 0.3mum thick is simultaneously utilized as a wiring 4. Next Mo5 and Al6 are formed by evaporating process. Mo5 and Al6 are respectively 0.3mum and 0.5mum thick containing 4% impurity of Cu. Next Al6/Mo5 are selectively dry-etched utilizing photoresist 7 as a mask. Al6 and Mo5 are etched respectively utilizing CCl4 gas. After etching Al6 and Mo5, photoresist 7 is removed. The Al/Mo wiring may be reliably connected to Au/ Ni/AuGe wiring 4 and the electrode 3. |
