PROCESS OF FORMING A THIN GLASS FILM ON A SEMICONDUCTOR SUBSTRATE

摘要

A binary glass for use in integrated circuits has a softening or flow point far below temperatures at which glasses normally used in connection with integrated circuits flow. Preferably the glass comprises a mixture of germanium dioxide and silicon dioxide wherein the germanium dioxide is no greater than approximately 50 % by weight of the mixture. Phosphorus is added to the glass film for passivation of the underlying devices.