| 摘要 |
PURPOSE:To produce a compact MOSFET subject to high output while improving the current density by a method wherein drain region and source region are subdivided into multiple regions to make electrode come into contact with any specified parts through the intermediary of insulating films. CONSTITUTION:An insulating film 13 comprising e.g. a silicon oxide film is formed on a substrate 10 while electrode layers 14-1, 14-2, 15-1, 15-2 respectively coming into contact with each region 11-1, 11-2, 12-1, 12-2 are formed through the intermediary of contact holes formed into the insulating film 13. Besides, a gate electrode 16 is formed between drain regions and source regions through the intermediary of a gate insulating film 20 and then a silicon oxide film 17 covering the surface is formed while a conductor layer 18 connecting the drain regions 14-1, 14-2 with each other and another conductor layer 19 connecting the source regions 15-1, 15-2 with each other are formed through the intermediary of contact holes formed into the silicon oxide film 17. Resultantly, an MOSFET subject to high output and high speed operation may be produced since the mutual conductance of MOSFET and the current between drain and source regions are increased while the ON resistance between drain and source regions is decreased. |
