| 摘要 |
Process for the planarization of an integrated circuit structure (30) by a two stage planarization process which comprises: applying over a metallization layer (40, 42, 44), having one or more openings (46, 48) therein, a layer of insulation (50') sufficiently thin to avoid formation of voids in the portion of the insulation applied in the openings in the metallization layer; smoothing the insulation layer by removing the high portions of the insulation by, for example, dry etching the insulation; applying a further layer of insulation (70) over the first insulation layer; and smoothing the further layer of insulation by removing the high portions by, for example, dry etching; whereby the resultant smoothed insulation surface will be substantially planar and substantially void-free. In a preferred embodiment, a second material, such as a photoresist material (60, 80), is coated over the insulation layer prior to the smoothing step, particularly when an anisotropic dry etching process is used, to insure that only the high portions of the insulation layer are removed in the etching step. |
