| 摘要 |
PURPOSE:To form a high purity thin film containing crystal Si with a high reproducibility by a method wherein the form of jig fixing the interval of discharge electrodes is shaped with the pleat, and an inter surface of a surrounding wall, a support of vapor deposited substrate and a surface of facing electrode group are covered with a material containing Si. CONSTITUTION:A pair of substrate holder 14 is placed in the casing 9 made of quartz tube, is fixed keeping the constant interval of substrate holders using fixtures 17 provided with the pleat at both ends. The Si film is formed in advance on the surface of substrate holder 14, and the glass substrate 15 is fixed on the substrate holder, and then the substrate 15 is kept at 550 deg.C after exhausting the gas inside the casing. Subsequently, the mixed gas of hydrogen 90% and SiH4 10% are introduced inside the casing 9 and glow-discharge is generated at facing poles of the substrate holders 14. The thin film containing the fine crystal of Si is deposited on the substrate 15 by this discharge and also high resist amorphous Si film is deposited on the portion of the fixture 17 because of the low temperature. Besides, the deposit of film to the inner part of the pleat is of very small amount and the Si film containing the fine crystal is formed on the substrate 15 by mean of the stable discharge. |
