| 摘要 |
PURPOSE:To offer a surface acoustic wave substrate with less propagation loss by growing epitaxially an oxide single crystal thin film on a silicon substrate and growing epitaxially a piezoelectric thin film on the single crystal film. CONSTITUTION:The oxide single crystal thin film 14 is grown epitaxially on the silicon substrate 11 and then the piezoelectric thin film 12 is grown epitaxially on the oxide single crystal film 14. The surface acoustic wave device is manufactured by forming a comb line electrode 13 on the piezoelectric thin film finally. The propagation loss of a conventional substrate is 50dB/cm at a frequency of 200MHz, while it is 1dB/cm at 200MHz in the substrate manufactured in the execution example, 10dB/cm at 500MHz and the propagation loss is improved largely in conventional with the conventional loss. |
