发明名称 FORMING METHOD OF PATTERN
摘要 PURPOSE:To enable the control of two-dimentional arrangement of a monomolecular film or a monomolecular accumulated film, by scanning the surface of a substrate by means of energy beams, and by forming then a pattern to form the monomolecular film or the monomolecular accumulated film. CONSTITUTION:On the surface of an Si (100) plate 1-1, for instance, a monomolecular accumulated film 1-2 of arachidic acid is formed by the LB method to prepare a substrate. Next, the surface of the substrate is scanned by an argon laser condensed into a radius of 50mum. Thereby an arachidic acid film in a scanned part 1-4 is degenerated and vaporized and thus a pattern is formed. Then, a monomolecular accumulated film of the derivative of arachidic acid and merocyanine is formed by the LB method. Concretely, a solution prepared by dissolving said acid and derivative in chloro-form is developed on the surface of water and then deposited in an layer. A monomolecular accumulated film 1-5 is not formed in the part 1-4, but formed only in a part 1-3 in accordance with the pattern.
申请公布号 JPS60211918(A) 申请公布日期 1985.10.24
申请号 JP19840067575 申请日期 1984.04.06
申请人 CANON KK 发明人 HIRAI YUTAKA;MATSUDA HIROSHI;TOMITA YOSHINORI
分类号 H01L51/05;H01L21/304;H01L21/312;H01L21/368;H01L49/02;H01L51/40 主分类号 H01L51/05
代理机构 代理人
主权项
地址