发明名称 METHOD FOR FORMATION OF PATTERN
摘要 PURPOSE:To enable to control the two dimensional arrangement of a monomolecular film or a monomolecular accumulated film by a method wherein, after an ion beam has been scanned on the surface of a base in an oxidizing gas atmosphere, the monomolecular film or the monomolecular accumulated film is formed, and then a pattern is formed thereon. CONSTITUTION:An aluminum film 1-2 is vapor-deposited on a glass substrate and the like of 1-1, and a base is formed. Then, oxygen is flowed into the surface part of the base, and an Si ion beam is scanned on the surface of the base in the form of pattern. Subsequently, a monomolecular accumulated film is formed using a solution wherein arachidic acid and a melocyanine derivative are dissolved by performing an LB method. A monomolecular accumulated film 1-5 is formed only on the base 1-3 of the modified part by the Si ion beam, and the monomolecular accumulated film is not formed on a non-modified part 1-4.
申请公布号 JPS60211925(A) 申请公布日期 1985.10.24
申请号 JP19840067582 申请日期 1984.04.06
申请人 CANON KK 发明人 HIRAI YUTAKA;MATSUDA HIROSHI;TOMITA YOSHINORI
分类号 H01L51/05;H01L21/304;H01L21/312;H01L21/368;H01L49/02;H01L51/40 主分类号 H01L51/05
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