| 摘要 |
PURPOSE:To constitute a non-volatile memory cell with no degradation of a small number of parts by arranging a magnetic thin film at such short distance from a magneto-resistance element and a lead wire, which connects the magneto- resistance element and a transfer gate, that the magnetic thin film can be connected magnetically to said magneto-resistance element and lead wire. CONSTITUTION:The electric resistance of a magneto-resistance element 4 is changed in accordance with the magnitude and the direction of an applied magnetic field. A transfer gate 5 is connected in series to the element 4. A magnetic thin film 6 is arranged at such short distance from the element 4 that the thin film 6 can be connected magnetically to the element 4 as shown by an arrow 8, and the magnetic thin film 6 is arranged at such short distance from a lead wire 7 connecting the element 4 and the gate 5 that the thin film can be connected magnetically to the lead wire 7 as shown by arrows 9. At a data write time, a word line 3 is set to a prescribed voltage level, and currents are flowed to data lines 1 and 2 to magnetize the thin film 6. At a data read time, the word line 3 is set to a prescribed voltage level to detect variance of the resistance between data lines 1 and 2. Thus, the non-volatile memory cell of no degradation is constituted with a small number of parts. |
