| 摘要 |
PURPOSE:To form an insulating film at a low temperature by bringing the surface of a base body into contact with an atmosphere containing a reaction gas and giving reaction energy by projecting beams. CONSTITUTION:Silicon substrates 1 are placed on a bottom plate heated at 200 deg.C by a heater 3 in a reaction chamber 2, and irradiated by far ultraviolet rays from a low-voltage mercury-arc lamp 4. SiH4 gas at the rate of 10ml/min from a cylinder 6, N2O gas at the rate of 800ml/min from a bomb 7, NH3 gas at the rate of 500ml/min from a bomb 8 and N2 gas at the rate of 100ml/min from a bomb 9 are introduced while their flow rates are controlled from mass flowmeters 5 as reaction gases, and the inside of the reaction chamber 2 is kept at approximately 1Torr pressure by a vacuum pump 10. silicon oxynitride films at the rate of an silicon oxide section:an silicon nitride section=2:1 are deposited on the substrates 1 in 2,000Angstrom thickness by flowing the reaction gases for 10min. |
