| 摘要 |
PURPOSE:To obtain the titled device of stabilized basic lateral mode and low oscillation- threhold-current by a method wherein the upper layer is brought into a superlattice structure by sandwiching the active layer with semiconductor layers different in conductivity type having larger forbidden band widths and smaller diffractive indices, and this lattice structure is changed into alloy mixed crystals by introducing an impurity reaching this structure into the part other than the stripe region. CONSTITUTION:The first conductivity type clad layer 2, active layer 5, second conductivity type photo guide layer 4 of superlattice structure made of a well layer and a barrier layer, second conductivity type clad layer 5, and second conductivity type contact layer 11 are epitaxially grown by lamination on the first conductivity type semiconductor substrate 1. Next, a stripeform mask 12 is provided on the layer 11, and an introduced region made of layers 110, 50, and 40 in order from the surface is formed by introducing the impurity till the inside of the layer 4 by diffusion or ion implantation from the surface. At this time, the concentration and the depth of the impurity are determined, and the superlattice structure is extinguished in the layer 4. Thereafter, an insulation film 7 for current stricture is adhered to the surface after removal of the mask 12, and the second conductivity type electrode 8 is mounted after a window is opened in the stripe region; then, the first conductivity type electrode 9 is adhered to the back. |
