发明名称 MASK STRUCTURE AND MASKING METHOD FOR X RAY LITHOGRAPHY
摘要 <p>A mask substrate for use in X-ray lithography formed of a composite, X-ray transparent member which is stretched over a fixture to a predetermined tension and then adhered to a borosilicate glass ring. In accordance with a preferred embodiment, the composite member includes a film of polyborane which has been grown in compression, onto which a polyimide is coated. The polyborane film is grown on a silicon wafer, coated with the polyimide, after which the central area of the wafer is etched away. The borosilicate glass is adhered to the polyimide side of the composite, leaving the tensioned polyborane surface open for the application of an X-ray absorptive pattern thereto to define a complete mask structure suitable for use in X-ray lithography.</p>
申请公布号 JPS60211460(A) 申请公布日期 1985.10.23
申请号 JP19850049204 申请日期 1985.03.11
申请人 EATON CORP 发明人 DANIERU REONARUDO BUROAZU;BOBU JIYOO UIRIAMUZU
分类号 G03F1/22;H01L21/027 主分类号 G03F1/22
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