发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent cracks of a sealed resin layer by a method wherein a gelled film is provided out of a silane coupler having an epoxy radical and sealed with an epoxy resin having a vitrification transition point of 200 deg.C or more. CONSTITUTION:The sealant is produced by kneading at 80-90 deg.C epoxy novolak (epoxy equivalent) 100 of weight ratio, polyimide series resin 320, phenol novolak 80, fine powder of quartz 119, carnauba wax 5, gamma-glycidoxypropylmethoxysilane 2, and carbon black 1, and then by cool grinding. After the solution of isopropylalcohol with 2% of gamma-glycydoxypropylmethoxysilane is applied to a lead frame holding a chip and then dried, the sealant is molded 180 deg.C for 3min through 180 deg.C treatment, and is then cured at 200 deg.C for 5hr. This construction is effective for the device having a chip of 3mm. squared or more and 1.5mm. or less thickness and a total thickness of package of 3mm. or less, and allows no cracks even under exposure to the high temperature in soldering treatment.</p>
申请公布号 JPS60210855(A) 申请公布日期 1985.10.23
申请号 JP19840066516 申请日期 1984.04.03
申请人 HITACHI KASEI KOGYO KK 发明人 KOUJIMA HIROKI;YAMAMORI MASAMI;ISHIGAWARA MITSUO;SUZUKI HIROSHI
分类号 H01L23/50;H01L23/28;H01L23/29 主分类号 H01L23/50
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