| 摘要 |
PURPOSE:To form an electrically conductive alloy film by growth without exerting any unfavorable influence on a substrate by bringing a reactive gaseous mixture contg. all of the constituent elements of the alloy into contact with the surface of the substrate and by irradiating light on the substrate to apply reaction energy. CONSTITUTION:An Si substrate 1 coated with an SiO2 film is placed in a reaction chamber 2 evacuated with a vacuum pump 3, and gaseous Al(CH3)3 5, gaseous SiH4 6 and gaseous He 7 as a carrier gas are introduced into the chamber 2 after controlling the flow rates with each mass flowmeter 4. Ultraviolet or visible light of 1,000-6,000Angstrom wavelengths, preferably laser light 8 such as ArF excimer laser light is reflected by a mirror 9 and irradiated on the substrate 1 through a lens 10 to apply reaction energy. An electrically conductive Al-Si alloy film or an Al-Si alloy wiring pattern is easily formed by growth on the oxide film on the substrate 1 without damaging the substrate. |
