发明名称 METHOD OF REMOVING POSITIVE TYPE PHOTO RESIST
摘要 PURPOSE:To completely remove the portion of unexposure under the condition of less Al corrosion by a method wherein a solution containing required amouts of hydrated hydrazine, ketone, and water or alcohol and an unexposed positive type photo resist are brought into the contact. CONSTITUTION:The unexposed positive type photo resist applied to a substrate after post-baking treatment at 130 deg.C or more is put in contact with the solution containing 80-95wt% of hydrated hydrazine, 5-20wt% of methylethylketone, and 0-15wt% of well-known alcohol or water, then being treated at 20-30 deg.C. With this construction, the unexposed positive type photo resist can be removed easily and completely in a short time, and the corrosion of the evaporated Al is markedly inhibited. Besides, the additional use of supersonic washing can markedly reduce the time for removal treatment.
申请公布号 JPS60210842(A) 申请公布日期 1985.10.23
申请号 JP19840067150 申请日期 1984.04.04
申请人 MITSUBISHI GAS KAGAKU KK 发明人 SUZUMORI TAKEO;KOKUBU JIYUN;OONO TETSUO
分类号 H01L21/30;G03F7/30;G03F7/42;H01L21/027 主分类号 H01L21/30
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