| 摘要 |
An improved semiconductor device includes a substrate (11) having a deposition surface, including at least one defect region (30, 32) capable of providing a low resistance shunt path or a nucleation centre, a relatively thick, continuous, electrically conductive leveling layer (26) electroplated on the deposition surface to provide a substantially defect-free surface, and a semiconductor body (27) deposited on the leveling layer. The substrate (11) is formed of aluminium or stainless steel while the leveling layer is preferably formed of nickel or silver. |
