| 摘要 |
PURPOSE:To contrive the large reduction of a synchronizing correction circuit or a synchronizing correction memory by a method wherein a synchronizing patterns of size for no resolution in reduction exposure is formed together with an actual reticle pattern on a reticle substrate. CONSTITUTION:The actual reticle pattern 42 and synchronizing patterns 43a, 43b,... are arranged on the reticle substrate by overlapping. The patterns 43a, 43b,... are formed over the exposure region of the reticle substrate in matrix form at a uniform pitch. Further, these synchronizing patterns are formed in micro dimension so as not to resolve on the substrate to be exposed at the time of reducing projection of the reticle pattern. Such a reticle is scanned with an image sensor as shown by a scanning line S: at the point when the scanning line S reaches the patterns 43a, 43b,..., each of these synchronizing pattern is ckecked with the actual pattern and the original pattern, resulting in synchronization by positional correction. Next, synchronization is made at the point when the scanning line reaches A, B,... points of the pattern 42. Thereby, an extremely small amount of correction is sufficient enough. |
