| 摘要 |
PURPOSE:To prevent the occurrence of a short-circuit trouble between a junction wire and a chip by a method wherein a region of the conductive type reverse to a substrate is selectively provided on the semiconductor exposed part located on the circumference of a semiconductor chip. CONSTITUTION:The n<+> regions 13 divided corresponding to a pad 4 are provided along the direction wherein a junction wire 9 is wired from the pad 4 on the exposed part 5 of a p type substrate 12 located on the circumference of a p type Si chip 11. Moreover, the width W1 of the region 13 and the width W2 of the pad 4 are to be formed in the state of W1>=W2. The number 14 in the diagram indicates a field insulating film, 15 indicates the upper insulating film, and 16 indicates a p<+> channel stopper. The substrate 12 and an n type functional region are operated with the former in zero potential and the latter in plus potential. Even when the junction wire 9 of plus potential comes in contact with the edge part of the chip, no short-circuit trouble is generated, because the junction part of the p type substrate 12 and the n<+> region 13 is inversely biased. Also, no unsatisfactory short-circuit is generated by the withstand voltage in forward direction of the junction even when the substrate comes in contact with the equipotential wire. As a result, the degree of freedom in design and manufacture is increased, and the yield of production and the reliability of the device can also be improved. |
