| 摘要 |
PURPOSE:To improve the image resolution of a CCD image sensor as well as the S/N by transferring vertically and individually the charge stored in each directional electrode or non-directional transfer electrodes of odd numbers. CONSTITUTION:For a 1E/B transfer type register, transfer electrodes 3U-3Z of a vertical CCD6 store first signal charges Q1-Q6. The directional transfer electrodes VTG (3U-3Z) contain potential barriers and potential wells. The VTG3Z has a shallow potential VL, and the signal charge Q1 is transferred to a horizontal CCD5A from the VTG3Z through a transfer gate 4A. Then the VTG3Z has a deep potential VH with the VTG3Y set at a shallow potential VL respectively. Thus the signal charge Q2 is transferred to a place under the VTG3Z. Furthermore both VTG3Z and 3X are set at shallow potentials with the VTG3Y and the gate 4A set at deep potentials respectively. Then the signal charge Q3 is transferred to a place under the VTG3Y. In the same way, signal charges Q3-Q6 are transferred vertically and in turn to a CCD5A.
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