Process for producing a semiconductor laser with several independent wavelengths and laser obtained by this process

摘要

Process for producing a laser having several wavelengths, wherein: a first double heterostructure is produced by epitaxy with an active layer having a first composition, the first double heterostructure obtained is etched into the substrate, through a mask having openings in the form of strips, which leads to a substrate on which there are strips of the first double heterostructure separated by etched portions, a second double heterostructure with an active layer having a second composition is grown in the etched portions, a groove is formed between the first and second heterostructures down to the contact layer, and the groove undergoes proton bombardment. The invention also relates to the laser obtained by this process. Application to optical telecommunications.