发明名称 MOS Voltage comparator and method
摘要 A semiconductor circuit and method for comparing an input signal voltage level against the circuit's supply voltage level and for providing a corresponding binary output signal, the circuit comprising first and second semiconductor devices for establishing voltage levels corresponding to the compared voltage levels on first and second nodes, respectively, third, fourth, fifth, and sixth semiconductor devices in combination with third, fourth, and fifth nodes arranged and connected to operate as a bistable element which is predisposed during a first time interval to favor one of the binary states in response to the difference in voltage levels established on the first and second nodes, and through the action of a seventh semiconductor device, which switches the main conductive path through the circuit off during the first interval and on during a second time interval, effecting a regenerative toggling of the bistable element to the favored state during the second time interval causing the desired binary signal to be output.
申请公布号 US4549100(A) 申请公布日期 1985.10.22
申请号 US19830492102 申请日期 1983.05.06
申请人 ROCKWELL INTERNATIONAL CORPORATION 发明人 SPENCE, JOHN R.
分类号 G01R19/165;H03K3/356;(IPC1-7):G01R19/165;H03K5/153 主分类号 G01R19/165
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