发明名称 |
CHEMICAL SENSING FIELD-EFFECT TRANSISTOR AND MANUFACTURE THEREOF |
摘要 |
A chemically sensitive field-effect transistor (ISFET) component has enhanced insulation properties. The source and drain regions are provided in an island provided on a substrate, wherein the island is doped with a type of impurity opposite to that with which the substrate is doped. This defines a PN insulation junction between the island and the substrate. |
申请公布号 |
JPS60209162(A) |
申请公布日期 |
1985.10.21 |
申请号 |
JP19850037743 |
申请日期 |
1985.02.28 |
申请人 |
KOODEISU YOOROTSUPA NV |
发明人 |
HENDORIKUSU KORUNERISU GIIRUTO RIGUTENBERUGU |
分类号 |
G01N27/00;G01N27/414;H01L21/761 |
主分类号 |
G01N27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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