| 摘要 |
PURPOSE:To reduce defects in a film by producing an amorphous silicon film and a silicon nitride film by means of a plasma CVD unit in which a magnet is disposed on the cathode side. CONSTITUTION:A thin film is produced with a plasma CVD unit in which a magnet 7 is disposed on the cathode side. As a result, electrons are subjected to Lorentz force which causes them to move spirally around the magnetic lines of force. Thus, in this unit, such phenomenon that the electrons impinge rapidly against a substrate 4 is inhibited more effectively as compared with a conventional unit in which no magnetic 7 is provided. Consequently, a thin film such as a thin film transistor with excellent element properties can be produced by this method. |
