| 摘要 |
PURPOSE:To eliminate poor removal of minute patterns and to improve peelability of a photoresist by using a homooligomer or cooligomer of an unsatd. ester having a polyfluoroalkyl group specified in C number. CONSTITUTION:The oligomer used here is a homo- and/or co-oligomer of an unsatd. ester having 4-20C polyfluoroalkyl group, preferably, such as an oligomer of acrylate or methacrylate having terminal perfluoroalkyl group, and a peeling soln. contg. it in an amt. of 0.01-5.0wt% is used. The objective photoresist may be of any type. This peeling compsn. is suilable for peeling the photoresist, especially in the case of manufacture of semiconductors, and the use of it permits poor peeling of mimute patterns to be prevented, soluble parts to be peeled in a short time, and pinholes due to swelling and film thinning to be prevented on the insolubilized parts. It is widely used for other photoresist applying fields. |
