| 摘要 |
PURPOSE:To provide a stable bias voltage between p-well and a substrate by decreasing the effect of the p-well layer provided to suppress blooming due to the applied pulse attended with field storage operation. CONSTITUTION:A high pulse voltage transferring stored electric charge from a diode is applied to transfer electrodes phiv1, phiv3 of the upper layer among two layers of transfer electrodes phiv1, phiv2, phiv3, phiv4 constituting a vertical transfer register. This is executed during the vertical blanking period at each field. The stored electric charge transferred from the diode to the vertical transfer register is mixed to realize the interlace operation by the high pulse voltage. In order to take much handling electric charge amount in this case, the level of the lower layer transfer electrodes phiv2, phiv4 is set to an intermediate pulse voltage VM at read of the stored electric charge in response to the mixing direction of the electric charge at each field. Thus, the bias voltage between the p-well and the substrate is stabilized.
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