| 摘要 |
<p>PURPOSE:To form a display electrode array with stable performance by providing a light shield electrode which covers at least the channel part of a thin-film TR and fixed at a specific voltage, and allowing the shield electrode to form electric capacity with no variation between channels across an insulating layer. CONSTITUTION:A gate line for exciting an FET1 is shown by 13 and a drain line are shown by 14. The light shield electrode is divided into 15-a and 15-b, and overlap parts with a picture-element electrode 2 are 16-a and 16-b. Even if there is mask matching deviation between the light shield electrodes 15-a and 15-b and picture-element electrode 2 and capacity 16-a decreases, capacity 16-b increases and the total amount of stored electricity is unchanged. Further, the area of the transparent picture-element electrode 2 covered with the light shield electrodes 15-a and 15-b is unchanged and the transmissivity of external illumination light is fixed. Consequently, electric characteristics have no unevenness and the display electrode array which has high manufacture yield and suits to a large-capacity display device is obtained.</p> |
