| 摘要 |
PURPOSE:To reduce the temperature dependence of the resistance value of a semiconductor resistance element without lowering resistivity by forming a doping region, which contains the resistor element and to which IV group neutral impurity atoms, which do not function as a donor or an acceptor, are doped in high concentration. CONSTITUTION:In a semiconductor resistance element, a doping region 4, to which IV group neutral impurity atoms, which do not function as a donor or an acceptor, are doped in high concentration in a shape that the resistor element 2 is included, is formed. When the doping region is shaped, a scattering mechanism in a case by neutral impurity atoms is added. When the mobility of a neutral impurity at a time when the scattering mechanism is generated singly is represented by muN, the mobility muN of the neutral impurity is brought to a low value as 30.7(cm<2>/V.sec) when germanium is doped into silicon by 10<19>cm<-3> when silicon is used as a semiconductor-substrate crystal and germanium (Ge) as neutral impurity atoms. Accordingly, the temperature dependence of the resistance value of the semiconductor resistance element can be reduced without lowering resistivity rho. |
