| 摘要 |
PURPOSE:To prevent the expansion of an element region, and to improve yield by forming a polycrystalline silicon layer on a second silicon oxide film, selectively removing a semiconductor layer in the vicinity of the central section of laminated structure and isolating the semiconductor layer into two. CONSTITUTION:A square projecting section 14 is formed to a semiconductor substrate 11. An silicon oxide film 15 is shaped, only the silicon oxide film 15 on the upper surface and side surface of the projecting section 14 is removed selectively, and a mask 16 is also removed. A mask 18 for etching coating an silicon oxide film 17 shaped on one side surface of the projecting section 14 is formed, and residual silicon oxide films 17 are removed. The whole surface is oxidized thinly to form an silicon oxide film 23, and the silicon oxide film 23 is removed selectively by using a mask 24 to shape contact holes 25. A metal for electrodes is evaporated, and a gate wiring 26 and source and drain wirings 27 are formed through patterning. The damage of an silicon crystal is reduced, and the expansion of an element region is prevented. |
