| 摘要 |
PURPOSE:To reduce crystal defects such as a slip line, etc. at manufacture of a semicondoctor by a method wherein the temperature deflection of a semiconductor wafer during a vapor phase growth film forming process is suppressed to the minimum possible. CONSTITUTION:Out of the respective eddy parts 3a... of an induction coil 3, rods 7... supporting the eddy parts 3a... corresponding to the outer peripheral part A and the inner peripheral part C of susceptor 2 are extended downward, penetrated airtightly through the base plate 9 of a reaction chamber, and led out outside of the reaction chamber 1. Thereupon the rods 7... are connected respectively to driving parts 10... to shift the rods finely in the vertical direction, and the eddy parts 3a... are enabled to be shifted finely in the vertical direction from the outside of the reaction chamber 1. The driving parts 10 are driven by small gear motors, for example, and the shifting quantities of the rods 7 are made to be controllable according to voltages to be applied to the motors, and current conducting hours. By performing the upward and downward moving operation of the respective eddy parts 3a... like this, the temperature deflection is improved remarkably, and generation of a slip line can be checked. |
