| 摘要 |
<p>PURPOSE:To change the etching rates of upper and lower semiconductor layers in a semiconductor layer constituted at two steps, to reduce the side etching of the semiconductor layer on the upper side, to prevent the deterioration of an inter-layer insulating film and to minimize dispersion and defects by forming the upper and lower semiconductor layers in different compositions. CONSTITUTION:An electrode 22 for display and mutual connection, an optical shielding film 23, hydride amorphous Si 24 containing P type impurity ions, hydride amorphous Si 25 having low impurity ion concentration, hydride amorphous Si 26 containing impurity ions and a short-circuiting layer 27 are formed on a substrate 21 in succession. P type crystallite Si 28, I type crystallite Si 29, N type crystallite Si 30 and a protective film 31 preventing the deterioration of a semiconductor layer when the semiconductor layer is etched, a resist is peeled and an inter-layer insulating film is shaped are formed successively. The protective film 31, the upper side semiconductor layers 28, 29, 30, the short-circuiting layer 27, the lower side semiconductors 24, 25, 26, the optical shielding layer 23 and the display electrode 22 are etched in each size. The semiconductor layers can be etched to an excellent shape that they are side-etched in a small amount by changing the compositions of the upper and lower semiconductor layers and etching them. Lastly, the inter-layer insulating films 32, 33 or a mutual wiring electrode 33 is formed.</p> |
