| 摘要 |
PURPOSE:To obtain the titled device having the multilayer interconnection of good design efficiency by a method wherein the first and second wiring layers are provided on a semiconductor substrate via insulation layer, and the first electrode layer is divided into the first region for wiring circuit elements and the second region for cross-wiring the second electrode layer; then, through holes for connection of both the electrode layers are provided at fixed positions. CONSTITUTION:The first and second electrode layers 13, and 15 are provided on the semiconductor substrate 11 via insulation layers 12 and 14. The first electrode layer 13 is divided into the first region 16 for wiring circuit elements and the second region 17 for cross-wiring the second electrode layers 15. The electrode layer 13 of the region 17 is extended and the electrode layers 15 are extended, resulting in the orthogonal arrangement of both. The through holes to connect the first electrode layer 13 of the second region 17 to the second electrode layers 15 are provided by suitable alienation by bending the second electrode layers 15 along the first electrode layer 13 of the second region 17. This manner enables the production of the titled device having the multilayer interconnection of good design efficiency. |
