发明名称 FORMATION OF THIN FILM PATTERN
摘要 PURPOSE:To improve the lift-off efficiency by a method wherein a lift-off pattern made of organic substance, inorganic substance, or metal is provided on a substrate, and a mask made of metal, inorganic substance, or organic substance is arranged thereon. CONSTITUTION:A pattern 2-2 made of organic substance such as resist or polyimide; inorganic substance such as SiO2, Al, Mo, or Cr is formed on a substrate 2-1, and this pattern is covered with a mask 2-3 made of stainless, rock crystal, or polyimide. Next, a thin film 2-4 is evaporated over the surface including these and deposited by a method such as sputtering, and the mask 2-3 is removed. At this time, since the resist and the like remain by adhesion to the edge 2-6 of the pattern 2-2, only a necessary thin film 2-8 made of thin film 2-3 is made to remain on the substrate 2-1 by removing that remaining part 2-7. This manner enables the pattern 2-2 to be corroded not only from the stepwise difference coating part 2-5 but also from the exposed part 2-6, and the removal of the unnecessary part 2-7 is performed rapidly.
申请公布号 JPS60206031(A) 申请公布日期 1985.10.17
申请号 JP19840061809 申请日期 1984.03.29
申请人 SUWA SEIKOSHA KK 发明人 YOKOYAMA OSAMU;SHIMIZU NOBUO;INOUE KUNIHIRO
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
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