| 摘要 |
PURPOSE:To lower contact resistance, to improve the rectifying properties of a contact and to reduce OFF currents by forming source and drain electrodes and a collector in a semiconductor thin-film to an inclined plane shaped to the end section of the semiconductor thin-film. CONSTITUTION:A source 7 and a drain 8 are formed on an inclined plane shaped to the end section of an amorphous silicon film 4. The source 7 and the drain 8 are superposed to a plane shape through a gate insulating film 3. Since the source and the drain are superposed to a channel region, the resistance of an R section can be ignored. Since there is no section in which the amorphous silicon film 4 and source and drain electrodes 5, 6 are directly in contact, the titled transistor has excellent rectifying properties in the joining of the source and the drain, Hall currents flow, and leakage currents are not increased. |
