| 摘要 |
PURPOSE:To obtain the titled device having Al series wirings excellent in moisture resistance and difficult in generating the failure of disconnection at the crystal grain boundary by a method wherein a layer of intermetallic compound of a transition metallic element with Al is arranged almost at the center of the wiring in the thickness direction, and the constituent transition metal in the intermetallic compound is added into the Al alloy of the wiring. CONSTITUTION:The wiring consisting of the alloy layer of transition metal and Al, e.g. Al-Ni layer 103, Al-Ni intermetallic compound Al3Ni layer 104, and Al-Ni layer 105 is formed on a thermal oxide film 102 on a thermally oxidized Si substrate 101 by the lift-off method. Thereby, the Al series wiring excellent in moisture resistance and difficult in generating the failure of disconnection at the crystal grain boundary can be obtained. |
